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automotive power datasheet rev 1.1, 2012-05-08 BTS41K0S-ME-N smart high-side nm os-power switch
datasheet 2 rev 1.1, 2012-05-08 BTS41K0S-ME-N table of contents 1 overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 block diagram and terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.1 pin assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3.2 pin definitions and functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 general product characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.1 absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4.2 functional range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4.3 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 typical performance graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.1 application diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 7.2 special features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 7.3 typical application waveform s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7.4 protection behavior . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 8 package outlines and footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 table of contents
pg-sot223-4 datasheet 3 rev 1.1, 2012-05-08 smart high-side nm os-power switch BTS41K0S-ME-N type package marking BTS41K0S-ME-N pg-sot223-4 41k0sn 1overview features ? current controlled input ? capable of driving all kind of loads (inductive, capacitive and resitive) ? negative voltage clamped at output with inductive loads ? current limitation ? very low standby current ? thermal shutdown with restart ? overload protection ? short circuit protection ? overvoltage protection (including load dump) ? reverse battery protection ? loss of gnd and loss of vbb protection ? esd-protection ? improved electromagnetic compatibility (emc) ? green product (rohs compliant) ? aec qualified description the BTS41K0S-ME-N is a protected 1 single channel smart high-si de nmos-power switch in a pg-sot223- 4 package with charge pump and current controlled input, monolithically integr ated in a smart power technology. product summary overvoltage protection v s(az) = min.62v operating voltage range 4,9v < v s < 45v on-state resistance r on typ 1 operating temperature range tj = -40c to 150c application ? all types of resistive, in ductive and capacitive loads in automotive applications ? current controlled power switch for 12v, 24v and 45v dc automotive and industrial applications ? driver for electromagnetic relays ? signal amplifier
datasheet 4 rev 1.1, 2012-05-08 BTS41K0S-ME-N block diagram and terms 2 block diagram and terms figure 1 block diagram figure 2 terms - parameter definition 3 BTS41K0S-ME-N 1 control circuit r in 2, 4 temperature sensor in out v s i in v in v out v s i s i l r l v on gnd in out v s voltage- and current-definitions: switching times and slew rate definitions: off off on v ds v out 90% 0 +v s 10% t off i in 0 i in(off ) i in(on) t i l t 0 t on dv/t on 30% dv/t off 70% 40% t 3 BTS41K0S-ME-N 1 control circuit r in 2, 4 temperature sensor
BTS41K0S-ME-N pin configuration datasheet 5 rev 1.1, 2012-05-08 3 pin configuration 3.1 pin assignment figure 3 pin configuration top view, pg-sot223-4 3.2 pin definitions and functions pin symbol function 1 in input, activates the power switch in case of connection to gnd 2 v s supply voltage 3 out output to the load 4 v s supply voltage 123 4
datasheet 6 rev 1.1, 2012-05-08 BTS41K0S-ME-N general product characteristics 4 general product characteristics 4.1 absolute maximum ratings note: exposure to absolute maximum rating conditions for extended periods may affect device reliabi lity. integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? the normal operat ing range. protection functions are not designed for continuous or repetitive operation. absolute maximum ratings 1) tj = -40c to 150c all voltages with respect to ground, currents flowing into the device unl ess otherwise specified in ?terms? 1) not subject to production test, specified by design pos. parameter symbol limit values unit conditions min. max. supply voltage v s 4.1.1 voltage v s 60 v output stage out 4.1.2 output current; (sho rt circuit current see electrical characteristics) i out a self limited input in 4.1.3 input current i in -15 15 ma temperatures 4.1.4 junction temperature t j -40 150 c 4.1.5 storage temperature t stg -55 150 c power dissipation 4.1.6 t a = 25 c device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70mm thick) copper area for vbb connection. pcb is vertical without blown air p tot 1.7 w inductive load switch-off energy dissipation 4.1.7 t j = 150 c; i l =0.15a; single pulse 1) e as 1000 mj load dump protection 4.1.8 v loaddump =v a + v s r l =2 ; td = 400ms; v in = h or l i l =0.15a; v s = 13.5v v s = 27v v loaddump is set up without the device under test connected to the generator per iso 7637-1 and din 40839 v loaddump v loaddump 93.5 127 v v esd susceptibility 4.1.9 esd susceptib ility (input pin) v esd -1 1 kv hbm 2) 2) esd susceptibility hbm according to eia/jesd 22-a 114. 4.1.10 esd susceptibilit y (all other pins) v esd -5 5 kv hbm 2)
BTS41K0S-ME-N general product characteristics datasheet 7 rev 1.1, 2012-05-08 4.2 functional range note: within the functional range the ic operates as de scribed in the circuit description. the electrical characteristics are specifi ed within the conditions given in the re lated electrical ch aracteristics table. 4.3 thermal resistance this thermal data was generated in accordance to jedec jesd51 standards. more information on www.jedec.org. pos. parameter symbol limit values unit conditions min. max. 4.2.1 nominal operating voltage v s 4.9 45 v v s increasing 4.2.2 standby current i s(off) 2 10 ua in open table 1 thermal resistance 1) 1) not subject to production test, specified by design pos. parameter symbol values unit note / test condition min. typ. max. 4.3.1 thermal resistan ce - junction to soldering point, pin4 r thj-pin4 15 k/w 4.3.2 thermal resistan ce - junction to ambient - 1s0p, minimal footprint r thja_1s0p 86 k/w 2) 2) specified r thja value is according to jedec jesd51-3 at natural convection on fr4 1s0p board, footprint; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70m cu. 4.3.3 thermal resistan ce - junction to ambient - 1s0p, 600mm 2 r thja_1s0p_600mm 60 k/w 3) 3) specified r thja value is according to jedec jesd51-3 at natural convection on fr4 1s0p board, 600mm 2 ; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70m cu.
datasheet 8 rev 1.1, 2012-05-08 BTS41K0S-ME-N electrical characteristics 5 electrical characteristics v s = 9v to 45v; tj = -40c to 150c; all voltages wit h respect to ground, currents flowing into the device unless otherwise specified in chapter ?blo ck diagram and terms?); typical values at v s = 13.5v, t j =25c pos. parameter symbol limit values unit conditions min. typ. max. powerstage (pmos and diode to gnd) 5.0.1 nmos on resistance r dson 0.8 1.5 i out = 150ma; t j = 25c; in conected to gnd 5.0.2 nmos on resistance r dson 1.5 3.0 i out = 150ma; t j = 150c; in conected to gnd 5.0.3 nmos on resistance r dson 25 i out = 50ma; t j = 25c; v s =6v; in conected to gnd 5.0.4 nominal load current 1) ; device on pcb 2) i l(nom) 0.2 a t a = 85c; t j = 150c; timings of power stages 5.0.5 turn on time 3) (to 90% of v out ); v s to gnd transition of v in t on 125 4) s v s =13.5v; r l =270 5.0.6 turn on time 3) (to 90% of v out ); v s to gnd transition of v in t on 45 100 s v s =13.5v; r l =270 ; t j = 25c 5.0.7 turn off time 3) (to 10% of v out ); gnd to v s transition of v in t off 175 4) s v s =13.5v; r l =270 5.0.8 turn off time 3) (to 10% of v out ); gnd to v s transition of v in t off 40 140 s v s =13.5v; r l =270 ; t j = 25c 5.0.9 on-slew rate 3) (10 to 30% of v out ); v s to gnd transition of v in dv out / dt on 6 4) v / s v s =13.5v; r l =270 5.0.10 on-slew rate 3) (10 to 30% of v out ); v s to gnd transition of v in dv out / dt on 1.3 4.0 v / s v s =13.5v; r l =270 t j = 25c 5.0.11 off-slew rate 3) ; (70 to 40% of v out ); gnd to v s transition of v in dv out / dt off 8 4) v / s v s =13.5v; r l =270 5.0.12 off-slew rate 3) ; (70 to 40% of v out ); gnd to v s transition of v in dv out / dt off 1.7 4.0 v / s v s =13.5v; r l =270 t j = 25c standby current consumption 5.0.13 standby current i s(off) 210 a in open
BTS41K0S-ME-N electrical characteristics datasheet 9 rev 1.1, 2012-05-08 protection functions 5) 5.0.14 initial peak short circuit current limit in conected to gnd i l(scp) 1.2 a t j = -40c ; v s = 13.5v t m = 100s 5.0.15 initial peak short circuit current limit in conected to gnd i l(scp) 0.9 a t j = 25c ; v s = 13.5v t m = 100s 5.0.16 initial peak short circuit current limit in conected to gnd i l(scp) 0.2 a t j =150c ; v s = 13.5v t m = 100s 5.0.17 repetitive short circuit current limit in conected to gnd i l(scr) 0.7 a 5.0.18 output clamp at v out = v s - v on(cl) (inductive load switch off) v on(cl) 60 v i s = 4ma 5.0.19 overvoltage protection v out = v s - v on(cl) v s(az) 62 68 v i s = 1ma 5.0.20 thermal overload trip temperature 4) t jtrip 150 c 5.0.21 thermal hysteresis 4) t hys 10 c input interface 5.0.22 off state input current i in(off) 0.05 ma t j = -25c ; r l = 270 v out =< 0.1v 5.0.23 off state input current i in(off) 0.04 ma t j = 150c ; r l = 270 v out =< 0.1v 5.0.24 on state input current; in connected to gnd 6) i in(on) 0.3 1.0 ma 5.0.25 input resistance r in 0.5 1.0 2.5 k reverse battery 5.0.26 continuous reverse drain current i drev 0.2 a 5.0.27 forward voltage of the drain-source reverse diode v fds 770 mv i fds =200ma i in =< 0.05ma 1) nominal load current is limited by the current limitation; see protection function data 2) device on 50mm x 50mm x 1,5mm epoxy fr4 pcb with 6cm2 (one layer copper 70um thick) copper area for supply voltage connection. pcb in vertical position with blown air 3) timing values only with high input slewrates ( t rin = t fin <= 50ns); otherwise slower 4) not tested in production 5) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operatin g range. protection functions are not designed for continuous repetitive operation. 6) driver circuit must be able to sink currents > 1ma v s = 9v to 45v; tj = -40c to 150c; all voltages wit h respect to ground, currents flowing into the device unless otherwise specified in chapter ?blo ck diagram and terms?); typical values at v s = 13.5v, t j =25c pos. parameter symbol limit values unit conditions min. typ. max.
datasheet 10 rev 1.1, 2012-05-08 BTS41K0S-ME-N typical performance graphs 6 typical performance graphs transient thermal impedance z thja versus pulse time t p @ 6cm2 heatsink area (d= t p /t) transient thermal impedance z thja versus pulse time t p @ min footprint (d= t p /t) on-resistance r dson versus junction temperature t j @ v s = 9v; i l =150ma on-resistance r dson versus supply voltage v s = v bb @ i l = 150ma ; t j = par.
BTS41K0S-ME-N typical performance graphs datasheet 11 rev 1.1, 2012-05-08 switch on time t on versus junction temperature t j @ r l = 270 ; v s = par. switch off time t off versus junction temperature t j @ r l = 270 ; v s = par. on slewrate sr on versus junction temperature t j @ r l = 270 ; v s = par. off slewrate sr off versus junction temperature t j @ r l = 270 ; v s = par.
datasheet 12 rev 1.1, 2012-05-08 BTS41K0S-ME-N typical performance graphs initial peak short circuit current limt i l(scp) versus junction temperature t j @ v s =13,5v; t m =100 s initial short circuit shutdown time t off(sc) versus junction start-temperature t j start ; v s = parameter initial peak short circuit current limt i l(scp) versus supply voltage v s = v bb @ t j = parameter; t m =100 s current limtation characteristic i l(sc) versus drain source voltage drop v on @ v s =13,5v
BTS41K0S-ME-N typical performance graphs datasheet 13 rev 1.1, 2012-05-08 stand by current consumption i s(off) versus junction temperature t j @ pin in open )
datasheet 14 rev 1.1, 2012-05-08 BTS41K0S-ME-N application information 7 application information 7.1 application diagram the following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty for a certain functi onality, condition or quality of the device. figure 4 application diagram the BTS41K0S-ME-N can be connected directly to the battery of a supply network. it is recommended to place a ceramic capacitor (e.g. c s = 220nf) between supply and gnd of the ecu to avoid line disturbances. wire harness inductors/resistors are sketched in the application circuit above. the complex load (resistive, capacitive or induct ive) must be connected to the output pin out. a built-in current limit protects the device against destruction. the BTS41K0S-ME-N can be switched on and off with a low power levelshifter switch e.g. infineon bcr1xx. the in pin must be pulled down to gnd potential to switch the BTS41K0S-ME-N on. if no current is pulled down, the in-node will float up to v s potential by an internal pull up. in this mode the BTS41K0S-ME-N is deactivated with very low current consumption. the output voltage slope is controlled during on and off transistion to minimize emissions. only a small cercap c out =1nf is recommended to attenuate rf noise. in the following chapters the main features, some typi cal waverforms and the protection behaviour of the BTS41K0S-ME-N is shown. for further details please refer to application notes on the infineon homepage. complexload 3 BTS41K0S-ME-N 1 control circuit r in temperature sensor in out v s 2, 4 infineon bcr 1xx vctrl wire harness complex load t on off electronic control unit wire harness chassis 2 chassis 3 c s 220nf c out 1nf chassis 1 vc trl
BTS41K0S-ME-N application information datasheet 15 rev 1.1, 2012-05-08 7.2 special features figure 5 special feature descriptions energy stored in the load inductance is given by : e l = i l 2*l/2 while demagnetizing the load inductance the energy dissipated by the power -dmos is: e as = e s + e l ?e r with an approximate solution for r l > 0 : e as = (i l *l) / (2*r l )*(v s +v on(cl) )*ln((1+(i l *r l ) / v on(cl) ) when an inductive load is switched off a current path must be established until the current is sloped down to zero (all energy removed from the inductive load ). for that purpose the series combination zd 2 and d1 is connceted between gate and drain of the power dmos. when the device is switched off , the voltage at out turns negative until v on(cl) is reached. the voltage on the incutive load is the difference between v on(cl) and v s . if reverse voltage is applied to the device : 1.) current via load resistance rl : i rev1 = (v rev ?v fm1 ) / r l 2.) current via input resistance rin : i rev2 = (v rev ?v fzd1 ) / r in both currents will sum up to: i rev = i rev1 + i rev2 if over-voltage is applied to the v s -pin: voltage is limited to vzd1; current can be calculated : i zd1 = (v s ?v zd1 ) / r in in case of esd pulse on the input pin there is in both polarities a peak current i inpeak ~ v esd / r in the control unit is protected in both cases by the zenerdiode zd1 3 BTS41K0S-ME-N 1 control circuit r in 2, 4 temperature sensor in out v s 3 BTS41K0S-ME-N 1 control circuit r in temperature sensor in out v s z l 2, 4 i rev1 i rev2 v rev 3 BTS41K0S-ME-N 1 control circuit r in temperature sensor in out v s l l 2, 4 i l v batt v on(cl) v out 3 BTS41K0S-ME-N 1 control circuit r in temperature sensor in out v s l l 2, 4 e r r l t on off e l e batt e load z l v batt v on v out v esd t on off zd 1 zd 2 d 1 m 1 zd 1 zd 2 d 1 m 1 zd 1 zd 2 d 1 m 1 zd 1 zd 2 d 1 m 1 v on(cl) i rev v fm1 v fzd1
datasheet 16 rev 1.1, 2012-05-08 BTS41K0S-ME-N application information 7.3 typical application waveforms figure 6 typical application waveforms general input output waveforms: v s t i in 0 i in(off ) i in(on) t 0 i l t 0 off off on v ds v out 90% 0 +v s 10% t off i in 0 i in(off) i in(on ) t i l t 0 t on dv/t on 30% dv/t off 70% 40% t waveforms switching a resistive load: off off on on waveforms switching a capacitive load: waveforms switching an inducitive load : v out t i in 0 i in(on) t 0 i l t 0 ~ v s i in(off ) v out t i in 0 i in(off) i in(on) t 0 i l t 0 ~ v s t v out v on(cl) i l(sc) off off on on off off on on
BTS41K0S-ME-N application information datasheet 17 rev 1.1, 2012-05-08 7.4 protection behavior figure 7 protective behaviour waveforms of the BTS41K0S-ME-N overtemperature concept: overtemperature behavior overtemperature toggling normal waveforms turn on into a short circuit : waveforms short circuit during on state : tt off off overloaded out shorted to gnd off normal operation on t jtrip t hys v out t i in 0 i in(off) i in(on) t 0 i l 0 i l(scr) i l(scp) t m t off(sc) shut down by overtemperature and restart by cooling (toggling ) shut down by overtemperature and restart by cooling (toggling ) v out t i in 0 i in(off) i in(on ) t 0 i l 0 i l(scr) t off off on on v out t i in 0 i in(off) i in(on ) t 0 t j t t jtrip t hys off t j off t jrestart cooling down heating up device status
datasheet 18 rev 1.1, 2012-05-08 BTS41K0S-ME-N package outlines and footprint 8 package outlines and footprint figure 8 pg-sot223-4 (plastic dual small out line package, rohs-compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-fre e soldering according to ipc/jedec j-std-020 sot223-po v04 12 3 3 4 ?.1 0.04 0.5 min. 0.28 0.1 max. 6.5 ?.2 a 4.6 2.3 0.7 ?.1 0.25 m a 1.6 ?.1 7 ?.3 b 0.25 m ?.2 3.5 b 0...10?
BTS41K0S-ME-N revision history datasheet 19 rev 1.1, 2012-05-08 9 revision history revision date changes v 1.1 12-05-08 page 9: line 5.0.27 changed from max 600mv to typ. 770mv page 13: graph eas vs iout deleted
edition 2012-05-08 published by infineon technologies ag 81726 munich, germany ? 2011-11-23 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies compon ents may be used in life-su pport devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safe ty or effectiveness of that de vice or system. life support devices or systems are intended to be implanted in the hu man body or to support an d/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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